Temperature dependence of avalanche breakdown in 4H-SiC devices

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 μm and 0.285 μm, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 μm p-i-n structu...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence.

We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with ...

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baliga’s equations have shown to be higher than other estimation techniques and simulation results, especially for voltages higher than 5kV. This pape...

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jun Hu Xiaobin Xin, Petre Alexandrov, Jian H. Zhao, Brenda VanMil, D. Kurt Gaskill, Kok-Keong Lew, Rachael Myers-Ward, and Charles Eddy, Jr., 3) 1) SiCLAB, ECE Dept., Rutgers University, 94 Brett Road, Piscataway, NJ 08854, USA, [email protected] 2) United Silicon Carbide, Inc., 100 Jersey Ave., BLDG A, New Brunswick, NJ 08901, USA 3) Naval Research Laboratory, Code 6882, 4555 Overlook Ave ...